Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering

Authors

  • R. Bernal Correa Laboratorio de Nanoestructuras Semiconductoras, Grupo Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia
  • J. Montes Monsalve Laboratorio de Nanoestructuras Semiconductoras, Grupo Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia
  • A. Pulzara Mora Laboratorio de Nanoestructuras Semiconductoras, Grupo Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia
  • M. López López Departamento de Física, Centro de Investigación y de Estudios Avanzados del I.P.N
  • A. Cruz Orea Departamento de Física, Centro de Investigación y de Estudios Avanzados del I.P.N
  • J. A. Cardona Grupo de Investigación en Materiales Semiconductores y Superiónicos. Departamento de Física Facultad de Ciencias. Universidad del Tolima.

Keywords:

Gallium arsenide, RF magnetron sputtering, Raman microscopy.

Abstract

Zinc-blende GaAs layers were prepared on (100) Si and glass substrates by r.f. magnetron sputtering. The morphology of GaAs layers is analyzed by means of atomic force microscopy (AFM) and scanning electron microscopy (FE-SEM), to determine the sample topography and growth type. The compositional analysis was performed by means of energy dispersive X-ray spectroscopy (EDS), in order to obtain information of the atomic percentages of the elements and their spatial distribution in the samples. The optical properties of the layers are discussed from the results of UV-Vis absorption, and Photoacoustic spectroscopy (PAS). Finally, the Raman shift of the GaAs phonon modes are studied as function of the penetration depth of laser wavelength used to excite the sample on Raman microscopy.

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Published

2014-09-15

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Research Papers

How to Cite

Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering. (2014). Superficies Y Vacío, 27(3), 102-106. https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/144