Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering
Vol. 27 Núm. 3 (2014), Artículos de Investigación
Vol. 27 Núm. 3 (2014)

Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering

Artículos de Investigación
Publicado 2014-09-15
R. Bernal Correa
Laboratorio de Nanoestructuras Semiconductoras, Grupo Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia
J. Montes Monsalve
Laboratorio de Nanoestructuras Semiconductoras, Grupo Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia
A. Pulzara Mora
Laboratorio de Nanoestructuras Semiconductoras, Grupo Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia
M. López López
Departamento de Física, Centro de Investigación y de Estudios Avanzados del I.P.N
A. Cruz Orea
Departamento de Física, Centro de Investigación y de Estudios Avanzados del I.P.N
J. A. Cardona
Grupo de Investigación en Materiales Semiconductores y Superiónicos. Departamento de Física Facultad de Ciencias. Universidad del Tolima.
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Bernal Correa, R., Montes Monsalve, J., Pulzara Mora, A., López López, M., Cruz Orea, A., & Cardona, J. A. (2014). Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering. Superficies Y Vacío, 27(3), 102-106. Recuperado a partir de https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/144
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Resumen

Zinc-blende GaAs layers were prepared on (100) Si and glass substrates by r.f. magnetron sputtering. The morphology of GaAs layers is analyzed by means of atomic force microscopy (AFM) and scanning electron microscopy (FE-SEM), to determine the sample topography and growth type. The compositional analysis was performed by means of energy dispersive X-ray spectroscopy (EDS), in order to obtain information of the atomic percentages of the elements and their spatial distribution in the samples. The optical properties of the layers are discussed from the results of UV-Vis absorption, and Photoacoustic spectroscopy (PAS). Finally, the Raman shift of the GaAs phonon modes are studied as function of the penetration depth of laser wavelength used to excite the sample on Raman microscopy.
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Citas

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