Semiconductor Nanocrystals of InP@ZnS: Synthesis and Characterization

Authors

  • J. S. Arias Cerón Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del IPN, Unidad Legaria
  • M. P. González Araoz Centro de Investigación en Biotecnología Aplicada, IPN. Facultad de Ingeniería, Universidad Autónoma de Puebla.
  • A. Bautista Hernández Facultad de Ingeniería, Universidad Autónoma de Puebla
  • J. F. Sánchez Ramírez Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas del IPN
  • J. L. Herrera Pérez Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas del IPN
  • J. G. Mendoza Álvarez Departamento de Física del Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional

Keywords:

Nanocrystals Synthesis, Semiconductors, Optical properties

Abstract

Colloidal dispersions of InP@ZnS nanoparticles were prepared using a single-step heating-up method relying at low temperature. The obtained particles are highly crystalline, monodisperse and exhibit size-dependent radiative emission in the range of 329?480 nm. By simply varying the concentration of the molecular precursor, the particles size can be controlled in the range from about 1.1 to 4.5 nm. The formation of InP nanocrystals has been confirmed using the techniques TEM, HRTEM, PL and UV-Vis spectroscopy.

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Published

2012-06-15

Issue

Vol. 25 No. 2 (2012)

Section

Research Papers

License

©2025 by the authors; licensee SMCTSM, Mexico. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/). 

How to Cite

Semiconductor Nanocrystals of InP@ZnS: Synthesis and Characterization. (2012). Superficies Y Vacío, 25(2), 134-138. https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/218