Optical characterization of Te-doped GaxIn1-xAsySb1-y epitaxial layers grown by liquid phase epitaxy
Vol. 25 No. 3 (2012), Research Papers
Vol. 25 No. 3 (2012)

Optical characterization of Te-doped GaxIn1-xAsySb1-y epitaxial layers grown by liquid phase epitaxy

Research Papers
Published 2012-09-15
Y. E. Bravo García
CICATA-IPN Unidad Legaria.
M. Zapata Torres
CICATA-IPN Unidad Legaria.
P. Rodríguez Fragoso
Depto. de Física, Cinvestav-IPN
J. G. Mendoza Álvarez
Depto. de Física, Cinvestav-IPN
J. L. Herrera Pérez
UPIITA-IPN
J. A. Cardona Bedoya
Depto. de Física. Universidad del Tolima. Ibague. Colombia
M. L. Gómez Herrera
Facultad de Ingeniería. Universidad Autónoma de Querétaro
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Keywords

III-V semiconductors
Liquid Phase Epitaxy

How to Cite

Bravo García, Y. E., Zapata Torres, M., Rodríguez Fragoso, P., Mendoza Álvarez, J. G., Herrera Pérez, J. L., Cardona Bedoya, J. A., & Gómez Herrera, M. L. (2012). Optical characterization of Te-doped GaxIn1-xAsySb1-y epitaxial layers grown by liquid phase epitaxy. Superficies Y Vacío, 25(3), 175-178. Retrieved from https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/201
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Abstract

A set of GaxIn1-xAsySb1-y quaternary layers were grown on (100) GaSb substrates using the liquid phase epitaxy technique (LPE). These layers were doped with tellurium and were characterized by Raman, Photoluminescence (PL) spectroscopy, and Secondary Ion Mass Spectroscopy (SIMS). Several optical modes were identified by performing Raman spectroscopy characterization at room temperature and observing the effect of the impurity concentration on the Raman mode frequencies. From secondary ion mass spectrometry the concentrations of Te in the liquid solutions  and the electron densities present in the layers were obtained. Finally, these last results were compared with those obtained from low temperature photoluminescence spectroscopy measurements at low temperatures on this set of samples.

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