Optical characterization of Te-doped GaxIn1-xAsySb1-y epitaxial layers grown by liquid phase epitaxy

Authors

  • Y. E. Bravo García CICATA-IPN Unidad Legaria.
  • M. Zapata Torres CICATA-IPN Unidad Legaria.
  • P. Rodríguez Fragoso Depto. de Física, Cinvestav-IPN
  • J. G. Mendoza Álvarez Depto. de Física, Cinvestav-IPN
  • J. L. Herrera Pérez UPIITA-IPN
  • J. A. Cardona Bedoya Depto. de Física. Universidad del Tolima. Ibague. Colombia
  • M. L. Gómez Herrera Facultad de Ingeniería. Universidad Autónoma de Querétaro

Keywords:

III-V semiconductors, Liquid Phase Epitaxy

Abstract

A set of GaxIn1-xAsySb1-y quaternary layers were grown on (100) GaSb substrates using the liquid phase epitaxy technique (LPE). These layers were doped with tellurium and were characterized by Raman, Photoluminescence (PL) spectroscopy, and Secondary Ion Mass Spectroscopy (SIMS). Several optical modes were identified by performing Raman spectroscopy characterization at room temperature and observing the effect of the impurity concentration on the Raman mode frequencies. From secondary ion mass spectrometry the concentrations of Te in the liquid solutions  and the electron densities present in the layers were obtained. Finally, these last results were compared with those obtained from low temperature photoluminescence spectroscopy measurements at low temperatures on this set of samples.

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Published

2012-09-15

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Section

Research Papers

How to Cite

Optical characterization of Te-doped GaxIn1-xAsySb1-y epitaxial layers grown by liquid phase epitaxy. (2012). Superficies Y Vacío, 25(3), 175-178. https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/201