Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells
Vol. 25 No. 4 (2012), Research Papers
Vol. 25 No. 4 (2012)

Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells

Research Papers
Published 2012-12-15
C. I. Cabrera
Department of Physics, University of Pinar del Río
J. C. Rimada
Solar cell laboratory, Institute of Materials Science and Technology (IMRE), University of Havana
L. Hernández
Faculty of Physics. University of Havana. Colina Universitaria
D. A. Contreras Solorio
Academic Unit of Physics, Autonomous University of Zacatecas
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Keywords

Quantum well
Strain in solids
Solar cell
Conversion efficiency
Modelling

How to Cite

Cabrera, C. I., Rimada, J. C., Hernández, L., & Contreras Solorio, D. A. (2012). Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells. Superficies Y Vacío, 25(4), 234-239. Retrieved from https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/195
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Abstract

A design of de GaAsP/InGaAs/GaAs solar cell is presented that allows to model high efficiency devices.  The stress, tensile and compressive, are considered in order to compute the electron and hole dispersion relation E(k) in conduction and valence band.  Similarly, the optical transitions in quantum well and barriers were evaluated to calculate the quantum internal efficiency and the photocurrent. GaAsP/InGaAs/GaAs solar cell is optimized to reach the maximum performance by means of J-V relation. Our model was used to determine the highest efficiencies for cells containing quantum wells under varying degrees of strain, showing that cells with strained quantum wells achieve high efficiencies.

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