Morphological and optical properties of porous silicon annealed in atomic hydrogen
Keywords:
Porous Silicon, PL, FTIR, Atomic HydrogenAbstract
In this work, optical and morphological changes on hydrogen-annealed porous silicon layers (PSL) are reported. The PSL were annealed in a hot filament chemical vapor deposition (HFCVD) system at a temperature of 1000 °C. Annealing time, 10, 20, 60, 90, 180 and 360 sec was taken as parameter to changes the properties of PSL. After treatment, the samples were characterized by scanning electron microscopy (SEM), Fourier Transform infrared (FTIR) spectroscopy, reflectance and photoluminescence (PL) measurements. It was found that silicon matrix, in the PSL, was etched off by their interaction with atomic radicals causing changes in its morphology, porosity and thickness. The reflectance of the film, which is dependent on the porosity, also decreased to values near to 0% in the range of 400 to 850 nm even for short annealing times. The emission properties of the films, in the visible range, shifted to blue region for longer processing time.
References
Andrea Edit Pap, Krisztián Kordás, Jouko VäHäkangas, Antti Uusimäki, Seppo Leppävouri, Laurent Pilon, Sándor Szatmari, Opt. Mater., 28, 506 (2006).
G. Mattei, A. Marucci, V. A. Yakovlev, and M. Pagannone, Laser Phys. 8, 755 (1998).
Mark B. H. Breese and Dharmalingam Mangaiyarkarasi, Opt. Express, 15, 5537 (2007).
M. Ghulinyan, C. J. Oton, G. Bonetti, Z. Gaburro, and L. Pavesi, J. Appl. Phys., 93, 9724 (2003).
A.E. Pap, K. Kordás, G. Tóth, J. Levoska, A. Uusimäki, J. Vähäkangas, and S. Leppävuori, J. Appl. Phys. 86, 041501 (2005).
Yukio H. Ogata, Naoki Yoshimi, Ryo Yasuda, Takashi Tsuboi, Tetsuo Sakka, Akira Otsuki, J. Appl. Phys., 90, 6487 (2001).
N. Ott, M. Nerding, G. Muller, R. Brendel, H. P. Strunk, J. Appl. Phys., 95 497 (2004).
Yue Zhao, Deren Yang, Dongsheng Li, Minghua Jiang. Materials Science and Engineering B. 116, 95 (2005).
X. Y. Hou, G. Shi, W. Wang, F. L. Zhang, P. H. Hao, D. M. Huang, and X. Wang. Appl. Phys. Lett., 62, 1097 (1993).
Zhao Yi, Yang Deren, Lin Lei, and Que Duanlin. Chinese Sci. Bull., 51, 2696 (2006).
A.J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski. Appl. Phys. Lett., 65, 1436 (1994).
Gu-Bo Li, Liang-Sheng Liao, Xiao-Bing Liu, Xiao-Yuan Hou, and Xun Wang. Appl. Phys. Lett., 70, 1284 (1997).
D. I. Kovalev and I. D. Yaroshetzkii, T. Muschik, V. Petrova-Koch, and F. Koch. Appl. Phys. Lett., 64, 234 (1994).
A.Coyopol, G. García, T. Díaz, E. Rosendo y H. Juárez. Superficies y Vacío. 23, 147 (2010).
P. Salazar, F. Chavez, F. Silva-Andrade, A. V. Ilinskii and N. Morales, Modern Phys. Lett. 15, 756 (2001).
T. Diaz-Becerril, G. Garcia-Salgado, A. Coyopol, E. Rosendo, H. Juarez, Mater. Sci. Forum, (636-637), (2010) 444.
Yi Wei, Lian Li and I. S. T. Tsong, Appl. Phys. Lett., 66, 1818 (1995).
D. R. Orlander, M. Balooch, J. Abrefah and J. Siekhaus, J. Vac. Sci. Technol. B, 5 1404 (1987).
A.Morales, J. Barreto, C. Domínguez, M. Riera, M. Aceves, J. Carrillo, Physica E. 38, 54 (2007).
Zhenrui Yu, M. Aceves, J. Carrillo, Mat. Sci. in Semic. Process. 7, 45 (2004).
G. Lucovsky and D. J. Tsu, J. Vac. Sci. Technol A, 5, 2231 (1987).
S. Kalem and M. Rosenbauer. Appl. Phys. Lett., 67, 2551 (1995).
F. L. Pedrotti, L. S. Pedrotti, Introduction to Optics, 2nd. Edit. Prentince-Hall Inc., (New Jersey, E.U., 1993).
J. I. Cisneros, Ondas Electromagnéticas Fundamentos y aplicaciones. Libro de Texto, EDUNICAMP (Campinas SP, Brasil, 2001).
O. Bisi, Stefano Ossicini, L. Pavesi, Surf. Sci. Rep., 38, 1 (2000).
C. Pickering, M.I.J. Beale, D.J. Robbins, P. J. Pearson, R. Greef, Thin Sol. Films, 125, 157 (1985).
M. H. Nayfeh, N. Barry, J. Therrien, O. Akcakir, E. Gratton, and G. Belomoin, Appl. Phys. Lett. 78, 1131 (2001).
Downloads
Published
Issue
Section
License
©2025 by the authors; licensee SMCTSM, Mexico. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).
