Abstract
Mg-doped GaN epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated by Photoluminescence, Raman scattering and X-ray Diffraction in the as-grown condition and after annealing. The photoluminescence measurement showed 2.9 eV band associated with the optical transitions from the conduction band to the Mg acceptor. Raman spectra shows local vibrational modes at 647.73 cm-1 and 265 cm-1 related to a local vibrational mode (LVM) of magnesium in GaN and as evidence of p-type character, respectively. The XRD analysis was employed to study the structure of the films.
References
Y. Nakagawa, M. Haraguchi, M. Fukui, S. Takanaka, A. Sakaki, K. Kususe, N. Hosokawa, T. Takehara, Y. Morioka, H. Iijima, M. Kubota, M. Abe, T. Mukai, H. Takagi and G. Shinomiya, Jpn. J. Appl. Phys., 43, 23 (2004).
K. S. Kim, G. M. Yang, H. J. Lee, Solid-State Electronics, 43 1807 (1999).
O. Gelhausen, H. N. Klein, M. R. Phillips, Appl. Phys. Lett., 81 3747(2002).
C. G. Van de Walle, Phys. Rev. B, 56 R10020(1997).
W. Götz, N. M. Johnson, J. Walker, D. P. Bour, and R. A. Street, Appl. Phys. Lett., 68 667(1996).
V. M. Sánchez Reséndiz, Crecimiento y caracterización de heteroestructuras: GaAs sobre Si, Tesis Doctorado CINVESTAV-IPN (Sección de Electrónica del Estado Sólido) México D. F. 2000.
T. S. Jeong, C. J. Youn, M. S. Han, J. W. Yang, K. Y. Lim, J. Cryst. Growth., 259, 267 (2003).
H. Teisseyre, T. Suski, P. Perlin, I. Grzegory, M. Leszczynski, M. Bockowski, and S. Porowski, Phys. Rev B, 62 10151(2000).
S. Nakamura, T. Mukai, M. Senoh and N. Iwasa, Jpn. J. Appl. Phys., 31 L139 (1992).
H. Harima, J. Phys.: Condens. Mattr. 14 R967 (2002).