Detalles de autor/a

Valderrama, R., National Institute of Astrophysics, Optics and Electronics, INAOE, México

• Superficies y Vacío Vol. 27 Núm. 1 (2014) Artículos de Investigación
  Memristance effect of metal-insulator-metal structures using Al2O3 film as active layer for emergent memory devices
  PDF (English)