High-temperature dependence of low magnetization Mn5Ge3 phase formation of sputtered thin films
Vol. 30 Núm. 4 (2017), Artículos de Investigación
Vol. 30 Núm. 4 (2017)

High-temperature dependence of low magnetization Mn5Ge3 phase formation of sputtered thin films

Artículos de Investigación
https://doi.org/10.47566/2017_syv30_1-040061
Publicado 2017-12-15
Adriana Alvídrez-Lechuga
Centro de Investigación en Materiales Avanzados, S.C. (CIMAV)
José T Holguín-Momaca
Centro de Investigación en Materiales Avanzados, S.C. (CIMAV)
Carlos Roberto Santillán-Rodríguez
Centro de Investigación en Materiales Avanzados, S.C. (CIMAV)
José Andrés Matutes-Aquino
Centro de Investigación en Materiales Avanzados, S.C. (CIMAV)
Sion Federico Olive-Méndez
Centro de Investigación en Materiales Avanzados, SC
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Alvídrez-Lechuga, A., Holguín-Momaca, J. T., Santillán-Rodríguez, C. R., Matutes-Aquino, J. A., & Olive-Méndez, S. F. (2017). High-temperature dependence of low magnetization Mn5Ge3 phase formation of sputtered thin films. Superficies Y Vacío, 30(4), 61-64. https://doi.org/10.47566/2017_syv30_1-040061
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We report on the high-temperature dependence of the Mn5Ge3 phase formation on Ge(001). High substrate temperatures from 650 to 850 °C lead to the formation of the Mn5Ge3 thin films with a low magnetization of ~250 kAm-1, which is an important characteristic for faster and low energy consumption of the switching of the magnetic orientation of magnetic thin films by spin-transfer torque. The highest temperature conducts to the formation of the Mn5Ge3 phase with only a small amount of Mn5Ge2 hexagonal clusters. Additionally, carbon doping of the Mn5Ge3 sample grown at 750 °C exhibits an enhancement of the Curie temperature from 296 K to 390 K. The growth mechanism corresponds to a Volmer-Weber mode.
https://doi.org/10.47566/2017_syv30_1-040061
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LENS (English)

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