Analysis of threshold voltage fluctuations due to short channel and random doping effects

Authors

  • A. Jiménez Electrical and Computer Engineering Department, Instituto de Ingeniería y Tecnología Universidad Autónoma de Ciudad Juárez
  • R. C. Ambrosio Electrical and Computer Engineering Department, Instituto de Ingeniería y Tecnología Universidad Autónoma de Ciudad Juárez
  • J. Jr. Mireles Electrical and Computer Engineering Department, Instituto de Ingeniería y Tecnología Universidad Autónoma de Ciudad Juárez
  • D. García Electrical and Computer Engineering Department, Instituto de Ingeniería y Tecnología Universidad Autónoma de Ciudad Juárez
  • F. J. De la Hidalga Electrical and Computer Engineering Department, Instituto de Ingeniería y Tecnología Universidad Autónoma de Ciudad Juárez

Keywords:

Threshold Voltage, Short Channel Effects, MOSFET, 2-D Simulations

Abstract

A two-dimensional (2-D) simulation study of short channel and random dopant effects on threshold voltage lowering and fluctuations in 90 nm MOSFET’s is presented. The systematic analysis of short channel and random dopant effects was carried out in 2-D on a scale to provide quantitative predictions. Simulations based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. Both short channel and random dopant effects, on threshold voltage fluctuations are simulated and discussed in MOSFET’s. The simulation results will be the start point for the analysis of threshold voltage fluctuations through the comparison with analytical models based on dopant number fluctuations. The simulations show that the threshold voltage fluctuations are principally determined by the fluctuation in the dopant number.

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Published

2013-03-15

Issue

Vol. 26 No. 1 (2013)

Section

Research Papers

License

©2025 by the authors; licensee SMCTSM, Mexico. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/). 

How to Cite

Analysis of threshold voltage fluctuations due to short channel and random doping effects. (2013). Superficies Y Vacío, 26(1), 1-3. https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/172