Photoluminescence studies of Mg-doped gallium nitride films grown by metalorganic chemical vapor deposition

Authors

  • C. Guarneros Posgrado en Física Aplicada, Facultad de Ciencias Físico-Matemáticas Benemérita Universidad Autónoma de Puebla
  • V. Sánchez Departamento de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional

Keywords:

Mg-doped GaN, Photoluminescence, Raman scattering, X-ray Diffraction Annealing

Abstract

Mg-doped GaN epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated by Photoluminescence, Raman scattering and X-ray Diffraction in the as-grown condition and after annealing. The photoluminescence measurement showed 2.9 eV band associated with the optical transitions from the conduction band to the Mg acceptor. Raman spectra shows local vibrational modes at 647.73 cm-1 and 265 cm-1 related to a local vibrational mode (LVM) of magnesium in GaN and as evidence of p-type character, respectively. The XRD analysis was employed to study the structure of the films.

References

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Published

2012-12-15

How to Cite

Guarneros, C., & Sánchez, V. (2012). Photoluminescence studies of Mg-doped gallium nitride films grown by metalorganic chemical vapor deposition. Superficies Y Vacío, 25(4), 223–225. Retrieved from https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/192

Issue

Vol. 25 No. 4 (2012)

Section

Research Papers

License

©2025 by the authors; licensee SMCTSM, Mexico. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).