Importance of liquid phase epitaxy on achieving near-lattice-matched growth of In0.145Ga0.855As0.132Sb0.868 layers on GaSb(100) substrates
Vol. 35 (2022), Research Papers
Vol. 35 (2022)

Importance of liquid phase epitaxy on achieving near-lattice-matched growth of In0.145Ga0.855As0.132Sb0.868 layers on GaSb(100) substrates

Research Papers
https://doi.org/10.47566/2022_syv35_1-220601
Published 2022-06-08
Miguel Ángel González Morales
Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional
https://orcid.org/0000-0003-4131-2345
Jose de Jesus Cruz Bueno
Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional
https://orcid.org/0000-0001-5377-2811
Gerardo Villa Martínez
Escuela Superior de Ingeniería Mecánica y Eléctrica, Unidad Ticomán, Instituto Politécnico Nacional
https://orcid.org/0000-0003-2782-6454
Manolo Ramírez López
Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional
https://orcid.org/0000-0002-0684-6803
Daniel Flores Ramírez
Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional
https://orcid.org/0000-0003-3124-5329
Patricia Rodríguez Fragoso
Departamento de Física, Centro de Investigación y de Estudios Avanzados, Instituto Politécnico Nacional
https://orcid.org/0000-0002-5854-0953
Jose Luis Herrera Pérez
Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional
https://orcid.org/0000-0003-3978-3965
Yenny Lucero Casallas Moreno
CONACYT-Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional
https://orcid.org/0000-0001-7998-2067
Julio Mendoza Álvarez
Departamento de Física, Centro de Investigación y de Estudios Avanzados, Instituto Politécnico Nacional
https://orcid.org/0000-0002-1325-6465
Cross-sectional HAADF micrograph of In0.145Ga0.855As0.132Sb0.868 layer grown on GaSb(100) substrate by LPE
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Keywords

InxGa1-xAsySb1-y layers
near-lattice-mismatched
Liquid Phase Epitaxy
infrared spectral region

How to Cite

González Morales, M. Ángel, Cruz Bueno, J. de J., Villa Martínez, G., Ramírez López, M., Flores Ramírez, D., Rodríguez Fragoso, P., Herrera Pérez, J. L., Casallas Moreno, Y. L., & Mendoza Álvarez, J. (2022). Importance of liquid phase epitaxy on achieving near-lattice-matched growth of In0.145Ga0.855As0.132Sb0.868 layers on GaSb(100) substrates. Superficies Y Vacío, 35, 220601. https://doi.org/10.47566/2022_syv35_1-220601
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Abstract

We report the growth of In0.145Ga0.855As0.132Sb0.868 layers on GaSb(100) substrates by the liquid phase epitaxy (LPE) technique using the ramp-cooling method. We achieved a near-lattice-matched epitaxial growth with a lattice mismatch of  between the quaternary layer and GaSb(100) substrate due to optimal growth parameters. Aberration-corrected scanning transmission electron microscope (AC-STEM) confirmed the high crystalline quality of the quaternary layer and the low lattice mismatch in the heterostructure, without the presence of linear or planar defects. Also, the Secondary Ion Mass Spectrometry (SIMS) technique evidenced a uniform distribution of the atomic elements along the quaternary layer and an abrupt interface between the In0.145Ga0.855As0.132Sb0.868 layer and the GaSb substrate. Plasmon-phonon interactions were observed by Raman spectroscopy indicating that the crystalline quality increases at greater depth in the sample with respect to the surface. The quaternary layer presented a uniform and flat morphology, and luminescence emission attributed to the recombination of bound exciton states at 641 meV. The structural, chemical, and optical properties of the In0.145Ga0.855As0.132Sb0.868 layer demonstrated that it could be auspicious material for infrared range optoelectronic applications. Likewise, the LPE technique successfully shows that it should be used to grow near-lattice-matched heterostructures.

https://doi.org/10.47566/2022_syv35_1-220601
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