High-temperature dependence of low magnetization Mn5Ge3 phase formation of sputtered thin films
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Keywords

Mn5Ge3
C-doping
High-temperature growth
Low magnetization
Sputtering

How to Cite

Alvídrez-Lechuga, A., Holguín-Momaca, J. T., Santillán-Rodríguez, C. R., Matutes-Aquino, J. A., & Olive-Méndez, S. F. (2017). High-temperature dependence of low magnetization Mn5Ge3 phase formation of sputtered thin films. Superficies Y Vacío, 30(4), 61-64. https://doi.org/10.47566/syv.v30i4.242

Abstract

We report on the high-temperature dependence of the Mn5Ge3 phase formation on Ge(001). High substrate temperatures from 650 to 850 °C lead to the formation of the Mn5Ge3 thin films with a low magnetization of ~250 kAm-1, which is an important characteristic for faster and low energy consumption of the switching of the magnetic orientation of magnetic thin films by spin-transfer torque. The highest temperature conducts to the formation of the Mn5Ge3 phase with only a small amount of Mn5Ge2 hexagonal clusters. Additionally, carbon doping of the Mn5Ge3 sample grown at 750 °C exhibits an enhancement of the Curie temperature from 296 K to 390 K. The growth mechanism corresponds to a Volmer-Weber mode.
https://doi.org/10.47566/syv.v30i4.242
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