Memristance effect of metal-insulator-metal structures using Al2O3 film as active layer for emergent memory devices. Superficies y Vacio [Internet]. 2014 Mar. 15 [cited 2025 Apr. 8];27(1):1-6. Available from: https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/145