Guarneros, C., J. E. Espinosa, V. M. Sánchez, and U. López. “Study of InxGa1-XN Layers Growth on GaN/Al2O3 by MOCVD at Different Pressures”. Superficies y Vacío 26, no. 3 (September 15, 2013): 107-110. Accessed May 2, 2024. https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/163.