CASTILLO OJEDA, R.; GALVÁN ARELLANO, M.; DÍAZ REYES, J. Epitaxial growth of an AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well using metalorganic vapours and solid arsenic as precursors. Superficies y Vacío, [S. l.], v. 26, n. 4, p. 120-125, 2013. Disponível em: https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/152. Acesso em: 3 may. 2024.