GUARNEROS, C.; ESPINOSA, J. E.; SÁNCHEZ, V. M.; LÓPEZ, U. Study of InxGa1-xN layers growth on GaN/Al2O3 by MOCVD at different pressures. Superficies y Vacío, [S. l.], v. 26, n. 3, p. 107-110, 2013. Disponível em: https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/163. Acesso em: 23 nov. 2024.