MOLINA, J.; VALDERRAMA, R.; CALLEJA, W.; ROSALES, P.; ZÚÑIGA, C.; GUTIÉRREZ, E.; HIDALGA, J.; TORRES, A. Memristance effect of metal-insulator-metal structures using Al2O3 film as active layer for emergent memory devices. Superficies y Vacío, [S. l.], v. 27, n. 1, p. 1-6, 2014. Disponível em: https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/145. Acesso em: 23 nov. 2024.