Study of InxGa1-xN layers growth on GaN/Al2O3 by MOCVD at different pressures. Superficies y Vacío, [S. l.], v. 26, n. 3, p. 107–110, 2013. Disponível em: https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/163. Acesso em: 4 apr. 2025.