Epitaxial growth of an AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well using metalorganic vapours and solid arsenic as precursors. Superficies y Vacío, [S. l.], v. 26, n. 4, p. 120–125, 2013. Disponível em: https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/152. Acesso em: 24 apr. 2025.