Memristance effect of metal-insulator-metal structures using Al2O3 film as active layer for emergent memory devices. Superficies y Vacío, [S. l.], v. 27, n. 1, p. 1–6, 2014. Disponível em: https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/145. Acesso em: 8 apr. 2025.