TY - JOUR AU - Hernandez Rodriguez, Eric AU - Marquez Herrera, Alfredo AU - Melendez Lira, Miguel AU - Valaguez Velazquez, Enrique AU - Zapata Torres, Martin PY - 2017/12/15 Y2 - 2024/03/28 TI - Bipolar resistive switching on Ti/TiO2/NiCr memory cells JF - Superficies y Vacío JA - Superficies y Vacio VL - 30 IS - 4 SE - DO - 10.47566/2017_syv30_1-040065 UR - https://superficiesyvacio.smctsm.org.mx/index.php/SyV/article/view/2017_syv30_1-040065 SP - 65-68 AB - <p>We investigated the electric-field-induced resistance-switching behavior of metal-insulator-metal (MIM) cells based on TiO<sub>2 </sub>thin films fabricated by the reactive RF-sputtering technique. MIM cells were constructed by sandwiched TiO<sub>2</sub> thin films between a pair of electrodes; Ti thin films were employed to form an ohmic bottom contact and NiCr thin films were employed to form Schottky top electrodes obtaining Ti/TiO<sub>2</sub>/NiCr MIM cells. Schottky barrier height for the TiO<sub>2</sub>/NiCr junction was determined according to the thermionic emission model by using the Cheung´s functions. SEM and Raman analysis of the TiO<sub>2</sub> thin films were carried out to ensure the quality of the films. Current-Voltage (<em>I-V</em>) sweeps obtained at room temperature by the application of dc bias showed a bipolar resistive switching behavior on the cells. Both low resistance state (ON state) and high resistance state (OFF state), of Ti/TiO<sub>2</sub>/NiCr cells are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 10<sup>3</sup> and the retention properties of both states are very stable after 10<sup>5 </sup>s with a voltage test of 0.1 V.</p> ER -